1. Each cleaning chamber is independently sealed to ensure a more thorough cleaning effect, effectively improving the cleanliness inside the FOUP and preventing interference from external contaminants. Each chamber can operate independently, providing flexibility and convenience, ensuring that different tasks do not interfere with each other and improving production efficiency.
2. The equipment integrates an N2 filling system and FOUP internal temperature and humidity detection functions, continuously monitoring and adjusting environmental conditions to prevent secondary contamination after cleaning.
3. Equipped with advanced vacuum dehumidification technology, it ensures that the humidity of the FOUP reaches an extremely low level after cleaning, meeting the stringent humidity control requirements of the semiconductor industry.
The fully automatic FOUP cleaning machine is specifically designed for cleaning 12-inch FOUP/FOSB particles and metal ions, and is widely used in the semiconductor industry. The equipment is equipped with a multi-stage precision filtration system, effectively ensuring cleanliness, meeting Class 10/100 cleanroom standards, and complying with stringent production process requirements.
It employs various spray cleaning processes, allowing 360° full coverage during cleaning, providing high-precision cleaning results, and ensuring the FOUP/FOSB surfaces are completely clean. The machine is also equipped with a high-efficiency vacuum drying system, significantly improving cleaning efficiency, meeting low-humidity environment requirements, and enabling real-time humidity monitoring (optional configuration).
- Supports mainstream communication protocols such as EAP/MES/FDC, SECS/GEM200/300.
- Supports integration with OHT/PGV/AGV equipment.
- Complies with SEMI S2, CE semiconductor manufacturing standards and certifications.
Equipment size: L4250 W3110 x x H2720 mm (including goblet + signal tower height, is for reference only) scope of application: 12 "Wafer foups/FOSB; Panel FOUP; Mask foups fixture types: according to the customers' product customization (Max12 inch foups) FPH: p 25 ea/H (12 inch Wafer foups) equipment stability: the UP Time > 99%; MTBF > 2000 hours; MTBA > 168 hours; MTTR < 3 h particulate matter control: SP3 / SP5 surface scanning Bare Wafer new < 20 ea@0.04um (except edge 3 mm) metal cation concentration of residual test: < 10 PPT (Li, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and zinc, Sr, Mo, Ba, W, Pb, Au, Ag) IPC - MS test AMC test: NH3 < 10ppbv; Total acids < 1ppbv; Amines < 1ppbv; SO2 < 1ppbv; VOC < 400 PPBV total power: MAX. 110 kw equipment net weight: 4000 kg of equipment material: chassis: crystal SUS304; Pipeline: PFA

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