1. The equipment supports 8-inch and 12-inch wafers. Switching only requires changing the FOUP adapter, without complex adjustments, making operation convenient and efficient, significantly enhancing the flexibility and switching speed of the production line.
2. Equipped with a pneumatic high-pressure pump, the pressure output can be adjusted to 60-200 KG/CM² according to process requirements. Combined with high-pressure nozzles, this effectively improves cleaning efficiency and adapts to different cleaning processes.
3. The pressure in the two-fluid system is controlled within 5 KG/CM², ensuring precise pressure regulation during cleaning, preventing damage to the wafers while improving cleaning effectiveness.
This equipment supports 8-inch and 12-inch wafers, and switching between machines only requires changing the FOUP adapter. It features multifunctional capabilities, allowing the integration of various cleaning functions according to different application needs, such as high-speed centrifugal rotation, HPC high-pressure cleaning, two-fluid cleaning, brush cleaning, SC1 chemical cleaning, and it also supports the addition of megasonic functionality to meet diverse process requirements.
The machine is particularly suitable for processes such as particle cleaning, flux cleaning, and photoresist residue cleaning. The chamber is designed using flow field simulation and is equipped with a unique sealing structure to ensure the cleanest environment for the wafers during the cleaning process.
Application scope: This equipment can be used to remove particles from 4 "to 12" wafers and clean flux residues
WPH: ≥15pcs/H/Chammber (Base on TT 120s)
Chamber type: Single wafer rotary process chamber
Loading/unloading: FOUP/SMIF/Cassette
Material
External: Stainless steel; Frame: Stainless steel
Chemical selection: SC1 / SC2 / SPM
Number of recycling ring groups: up to 4 groups
Particulate matter control: ≥0.06um removal rate > 96%, residue ≤ 10E@ ≥0.06um
Noise: < 75db

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